NSV60101DMR6T1G


NSV60101DMR6T1G

Part NumberNSV60101DMR6T1G

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6 Thin, TSOT-23-6

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Lead TimeTo be Confirmed

Detailed Description

NSV60101DMR6T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package3000
ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Part StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic200mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 5V
Power - Max530mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSC-74

NSV60101DMR6T1G - Tags

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