NSV1C200MZ4T1G
NSV1C200MZ4T1G
Part Number NSV1C200MZ4T1G Description TRANS PNP 100V 2A SOT223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 100V 2A 120MHz 800mW Surface Mount SOT-223
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NSV1C200MZ4T1G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet NSS1C200MZ4 Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223
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