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NST857BDP6T5G


NST857BDP6T5G

Part NumberNST857BDP6T5G

Manufacturer

Description

Datasheet

Package / CaseSOT-963

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NST857BDP6T5G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Power - Max350mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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