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NSS40300DDR2G

NSS40300DDR2G

Part NumberNSS40300DDR2G

ManufacturerON Semiconductor

DescriptionTRANS 2PNP 40V 3A 8SOIC

DatasheetNSS40300DDR2G

Package / Case8-SOIC (0.154", 3.90mm Width)

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

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NSS40300DDR2G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	NSS40300DDR2G
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	170mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A, 2V
Power - Max	653mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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