NSS35200MR6T1G


NSS35200MR6T1G

Part NumberNSS35200MR6T1G

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSS35200MR6T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package3000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)35V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Power - Max625mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Supplier Device Package6-TSOP
Base Part NumberNSS35200

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NSS35200MR6T1G - Tags

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