NSS12501UW3T2G


NSS12501UW3T2G

Part NumberNSS12501UW3T2G

Manufacturer

Description

Datasheet

Package / Case3-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSS12501UW3T2G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5A
Voltage - Collector Emitter Breakdown (Max)12V
Vce Saturation (Max) @ Ib, Ic120mV @ 400mA, 4A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 2V
Power - Max875mW
Frequency - Transition150MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-WDFN Exposed Pad
Supplier Device Package3-WDFN (2x2)
Base Part NumberNSS12501

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