NSBC115EPDXV6T1G

Part NumberNSBC115EPDXV6T1G

ManufacturerON Semiconductor

DescriptionSS SOT563 RSTR XSTR TR

DatasheetMUN5336DW1, NSBC115EPDXV6

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563

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NSBC115EPDXV6T1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

MUN5336DW1, NSBC115EPDXV6

Standard Package

4000

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Part Status

Active

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100kOhms

Resistor - Emitter Base (R2)

100kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

Power - Max

357mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

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