NSBC114EPDP6T5G


NSBC114EPDP6T5G

Part NumberNSBC114EPDP6T5G

Manufacturer

Description

Datasheet

Package / CaseSOT-963

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSBC114EPDP6T5G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max339mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963
Base Part NumberNSBC1*

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