NP33N06YDG-E1-AY

Part NumberNP33N06YDG-E1-AY

ManufacturerRenesas Electronics America

DescriptionMOSFET N-CH 60V 33A 8HSON

DatasheetNP33N06YDG

Package / Case8-SMD, Flat Lead Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON

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NP33N06YDG-E1-AY - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NP33N06YDG

Standard Package

2500

Manufacturer

Renesas Electronics America

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

Power Dissipation (Max)

1W (Ta), 97W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSON

Package / Case

8-SMD, Flat Lead Exposed Pad

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