NE66219-A


NE66219-A

Part NumberNE66219-A

Manufacturer

Description

Datasheet

Package / CaseSOT-523

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NE66219-A - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerCEL
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.3V
Frequency - Transition21GHz
Noise Figure (dB Typ @ f)1.2dB @ 2GHz
Gain14dB
Power - Max115mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-523
Supplier Device PackageSOT-523

NE66219-A - Tags

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