NDS356AP
NDS356AP
Part Number NDS356AP
Description MOSFET P-CH 30V 1.1A SSOT3
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
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NDS356AP - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NDS356AP
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3
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