NDS356AP
NDS356AP
Part Number NDS356AP Description MOSFET P-CH 30V 1.1A SSOT3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
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NDS356AP - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NDS356AP Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3
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