MUN5336DW1T1G

Part NumberMUN5336DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS NPN/PMP BRT SC70-6

DatasheetMUN5336DW1, NSBC115EPDXV6

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of MUN5336DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MUN5336DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MUN5336DW1T1G.
We are offering MUN5336DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MUN5336DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5336DW1, NSBC115EPDXV6
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	100kOhms
Resistor - Emitter Base (R2)	100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

MUN5336DW1T1G - Related Products

More >>

PBLS2001D,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP,	View
DCX115EU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363, Automotive, AEC-Q101	View
PBLS2001D,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP,	View
RN4610(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
DMG963H50R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
DMG963030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
PUMD12,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 300mW Surface Mount 6-TSSOP,	View
RN4982,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6,	View
UMD9NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6,	View
EMD4T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
SMUN5315DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View
PUMD9,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View

MUN5336DW1T1G - Tags

MUN5336DW1T1G MUN5336DW1T1G PDF MUN5336DW1T1G datasheet MUN5336DW1T1G specification MUN5336DW1T1G image MUN5336DW1T1G India Renesas Electronics India MUN5336DW1T1G buy MUN5336DW1T1G MUN5336DW1T1G price MUN5336DW1T1G distributor MUN5336DW1T1G supplier MUN5336DW1T1G wholesales