Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
2N5770	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92,	View
2SC5646A-TL-H	ON Semiconductor, RF Transistor NPN 4V 30mA 10GHz ~ 12.5GHz 100mW Surface Mount 3-SSFP,	View
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BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View
DSC5G0200L	Panasonic Electronic Components, RF Transistor NPN 20V 15mA 650MHz 150mW Surface Mount SMini3-F2-B,	View
MMBTH11	ON Semiconductor, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC4774T106S	Rohm Semiconductor, RF Transistor NPN 6V 50mA 800MHz 200mW Surface Mount UMT3,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View

MT3S113P(TE12L,F)

Part NumberMT3S113P(TE12L,F)