Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View
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BFP740ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 45GHz 160mW Surface Mount SOT-343,	View
2SC5646A-TL-H	ON Semiconductor, RF Transistor NPN 4V 30mA 10GHz ~ 12.5GHz 100mW Surface Mount 3-SSFP,	View
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BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
CPH6003A-TL-E	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH,	View
BFR93AWH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323-3,	View
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MCH4014-TL-H	ON Semiconductor, RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)