MSD602-RT1G
MSD602-RT1G
Part Number MSD602-RT1G
Description TRANS NPN 50V 0.5A SC59
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
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MSD602-RT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MSD602-RT1
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 10V
Power - Max 200mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
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