MSC1175M


MSC1175M

Part NumberMSC1175M

Manufacturer

Description

Datasheet

Package / CaseM218

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MSC1175M - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)-
Gain8dB
Power - Max400W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 5V
Current - Collector (Ic) (Max)12A
Operating Temperature250°C (TJ)
Mounting TypeChassis Mount
Package / CaseM218
Supplier Device PackageM218

MSC1175M - Tags

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