MS652S


MS652S

Part NumberMS652S

Manufacturer

Description

Datasheet

Package / CaseM123

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MS652S - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)16V
Frequency - Transition450MHz ~ 512MHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 200mA, 5V
Current - Collector (Ic) (Max)2A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / CaseM123
Supplier Device PackageM123

MS652S - Tags

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