MS1006


MS1006

Part NumberMS1006

Manufacturer

Description

Package / CaseM135

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MS1006 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Gain14dB
Power - Max127W
DC Current Gain (hFE) (Min) @ Ic, Vce19 @ 1.4A, 6V
Current - Collector (Ic) (Max)3.25A
Operating Temperature200°C
Mounting TypeStud Mount
Package / CaseM135
Supplier Device PackageM135

MS1006 - Tags

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