MPSH10G


MPSH10G

Part NumberMPSH10G

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MPSH10G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package5000
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Current - Collector (Ic) (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Part NumberMPSH10

MPSH10G - Tags

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