MMIX1F160N30T


MMIX1F160N30T

Part NumberMMIX1F160N30T

Manufacturer

Description

Datasheet

Package / Case24-PowerSMD, 21 Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MMIX1F160N30T - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package20
ManufacturerIXYS
SeriesGigaMOS™, HiperFET™, TrenchT2™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs335nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)570W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package24-SMPD
Package / Case24-PowerSMD, 21 Leads

MMIX1F160N30T - Tags

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