MMDT4146-7-F

Part NumberMMDT4146-7-F

ManufacturerDiodes Incorporated

DescriptionTRANS NPN/PNP 25V 0.2A SOT363

DatasheetMMDT4146

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array NPN, PNP 25V 200mA 300MHz, 250MHz 200mW Surface Mount SOT-363

To learn about the specification of MMDT4146-7-F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MMDT4146-7-F with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MMDT4146-7-F.
We are offering MMDT4146-7-F for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MMDT4146-7-F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	MMDT4146
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	25V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 1V
Power - Max	200mW
Frequency - Transition	300MHz, 250MHz
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363
Base Part Number	MMDT4146

MMDT4146-7-F - Related Products

More >>

HN4B01JE(TE85L,F)	Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV,	View
ZHB6792TA	Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN, 2 PNP (H-Bridge) 70V 1A 100MHz 1.25W Surface Mount SOT-223,	View
SMA6010	Sanken, Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 75MHz 4W Through Hole 12-SIP,	View
ECH8502-TL-H	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 100V, 50V 5A 290MHz 1.6W Surface Mount 8-ECH,	View
DMG204020R	Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP 50V 500mA 160MHz, 130MHz 300mW Surface Mount Mini6-G4-B,	View
SBC847BPDW1T1G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363, Automotive, AEC-Q101	View
PMBT3946YPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 350mW Surface Mount 6-TSSOP,	View
QS6Z5TR	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 1A 360MHz, 400MHz 1.25W Surface Mount TSMT6 (SC-95),	View
HN1B01FDW1T1G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 200mA 380mW Surface Mount SC-74,	View
UMZ2NTR	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 180MHz, 140MHz 150mW Surface Mount UMT6,	View
ZXTD4591E6TA	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 150MHz 1.1W Surface Mount SOT-23-6,	View
PBSS2515YPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 15V 500mA 420MHz, 280MHz 300mW Surface Mount 6-TSSOP,	View

MMDT4146-7-F - Tags

MMDT4146-7-F MMDT4146-7-F PDF MMDT4146-7-F datasheet MMDT4146-7-F specification MMDT4146-7-F image MMDT4146-7-F India Renesas Electronics India MMDT4146-7-F buy MMDT4146-7-F MMDT4146-7-F price MMDT4146-7-F distributor MMDT4146-7-F supplier MMDT4146-7-F wholesales