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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MMBT5550L-51L, SMMBT5551L
Standard Package 10000
Manufacturer ON Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 225mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Part Number MMBT5551
BC33716TA
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BD677
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BCX54-16,115
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 6A 153MHz 1.35W Surface Mount LFPAK56, Power-SO8,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 300mW Surface Mount SOT-23-3 (TO-236),
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ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 100mA 225mW Surface Mount SOT-23-3 (TO-236),
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2SC3838KT146N
Rohm Semiconductor, Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 200mW Surface Mount SMT3,
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