MMBT5550LT1G


MMBT5550LT1G

Part NumberMMBT5550LT1G

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MMBT5550LT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)140V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Power - Max225mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Base Part NumberMMBT5550

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