MJE802G
MJE802G
Part Number MJE802G
Description TRANS NPN DARL 80V 4A TO225AA
Package / Case TO-225AA, TO-126-3
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Detailed Description Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
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MJE802G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE700-703,800-803
Standard Package 500
Manufacturer ON Semiconductor
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
Power - Max 40W
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Base Part Number MJE802
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