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MJE800G

MJE800G

Part NumberMJE800G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 60V 4A TO225AA

DatasheetMJE700-703,800-803

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA

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MJE800G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJE700-703,800-803
Standard Package	500
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Power - Max	40W
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-225AA
Base Part Number	MJE800

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