MJE5850G
MJE5850G
Part Number MJE5850G Description TRANS PNP 300V 8A TO220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 300V 8A 80W Through Hole TO-220AB
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MJE5850G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE5850,1,2 Standard Package 50 Manufacturer ON Semiconductor Series SWITCHMODE™ Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V Power - Max 80W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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CMPT5087 TR Central Semiconductor Corp, Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 350mW Surface Mount SOT-23,
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DZT953-13 Diodes Incorporated, Bipolar (BJT) Transistor PNP 100V 5A 125MHz 1W Surface Mount SOT-223,
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