MJE5730G
MJE5730G
Part Number MJE5730G
Description TRANS PNP 300V 1A TO220AB
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220AB
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MJE5730G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE5730, 31(A)
Standard Package 50
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 300V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V
Power - Max 40W
Frequency - Transition 10MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
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