MJE5730G
MJE5730G
Part Number MJE5730G Description TRANS PNP 300V 1A TO220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220AB
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MJE5730G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE5730, 31(A) Standard Package 50 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V Power - Max 40W Frequency - Transition 10MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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NSVBC858BLT1G ON Semiconductor, Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23-3,
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MMBT3906LT1HTSA1 Infineon Technologies, Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 330mW Surface Mount SOT-23-3,
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