MJE350G


MJE350G

Part NumberMJE350G

Manufacturer

Description

Datasheet

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJE350G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package500
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)300V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-225AA
Base Part NumberMJE350

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MJE350G - Tags

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