MJE253G


MJE253G

Part NumberMJE253G

Manufacturer

Description

Datasheet

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJE253G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package500
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.5W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-225AA

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