MJE200G


MJE200G

Part NumberMJE200G

Manufacturer

Description

Datasheet

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJE200G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package500
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5A
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V
Power - Max15W
Frequency - Transition65MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-225AA
Base Part NumberMJE200

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