MJD5731T4G


MJD5731T4G

Part NumberMJD5731T4G

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJD5731T4G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Power - Max1.56W
Frequency - Transition10MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Base Part NumberMJD5731

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MJD5731T4G - Tags

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