MJD31C1G
MJD31C1G
Part Number MJD31C1G Description TRANS NPN 100V 3A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
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MJD31C1G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD31 (NPN), MJD32 (PNP) Standard Package 75 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V Power - Max 1.56W Frequency - Transition 3MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package I-PAK Base Part Number MJD31
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