Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ MJD31C1G

MJD31C1G

MJD31C1G

Part NumberMJD31C1G

ManufacturerON Semiconductor

DescriptionTRANS NPN 100V 3A IPAK

DatasheetMJD31 (NPN), MJD32 (PNP)

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

To learn about the specification of MJD31C1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MJD31C1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MJD31C1G.
We are offering MJD31C1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MJD31C1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD31 (NPN), MJD32 (PNP)
Standard Package	75
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Power - Max	1.56W
Frequency - Transition	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Base Part Number	MJD31

MJD31C1G - Related Products

	2SC4116-BL,LF	Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 100mW Surface Mount USM,	View
	ZXTN04120HKTC	Diodes Incorporated, Bipolar (BJT) Transistor NPN - Darlington 120V 1.5A 150MHz 1.5W Surface Mount TO-252, (D-Pak),	View
	BC847CT-TP	Micro Commercial Co, Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150mW Surface Mount SOT-523,	View
	2N6387G	ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220AB,	View
	DSC5002R0L	Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 500mA 160MHz 150mW Surface Mount SMini3-F2-B,	View
	ZXTN25020DGTA	Diodes Incorporated, Bipolar (BJT) Transistor NPN 20V 7A 215MHz 3W Surface Mount SOT-223,	View
	JANTX2N930	Microsemi Corporation, Bipolar (BJT) Transistor NPN 45V 30mA 300mW Through Hole TO-18 (TO-206AA), Military, MIL-PRF-19500/253	View
	BC817-40-TP	Micro Commercial Co, Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 310mW Surface Mount SOT-23,	View
	BC547CTA	ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92-3,	View
	SMMBT2369ALT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN 15V 200mA 225mW Surface Mount SOT-23-3 (TO-236),	View
	MMBT6427LT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 225mW Surface Mount SOT-23-3 (TO-236),	View
	DSC700400L	Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 2A 120MHz 1W Surface Mount MiniP3-F2-B,	View

MJD31C1G - Tags

MJD31C1G MJD31C1G PDF MJD31C1G datasheet MJD31C1G specification MJD31C1G image MJD31C1G India Renesas Electronics India MJD31C1G buy MJD31C1G MJD31C1G price MJD31C1G distributor MJD31C1G supplier MJD31C1G wholesales