MJD253-1G


MJD253-1G

Part NumberMJD253-1G

Manufacturer

Description

Datasheet

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJD253-1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package75
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.4W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Base Part NumberMJD253

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MJD253-1G - Tags

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