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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD148T4(G), NJVMJD148T4G
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V
Power - Max 1.75W
Frequency - Transition 3MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Part Number MJD148
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 1.15W Surface Mount SC-73, Automotive, AEC-Q101
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Diodes Incorporated, Bipolar (BJT) Transistor NPN 12V 4.5A 220MHz 1.5W Surface Mount SOT-23F,
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 1A 180MHz 960mW Surface Mount SC-73,
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 140V 300mA 300MHz 200mW Surface Mount SC-70,
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Microsemi Corporation, Bipolar (BJT) Transistor NPN 80V 1A 500mW Through Hole TO-18 (TO-206AA), Military, MIL-PRF-19500/391
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