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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD122/127, NJVMJD122/127
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 1.75W
Frequency - Transition 4MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Part Number MJD127
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ON Semiconductor, Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236),
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ON Semiconductor, Bipolar (BJT) Transistor PNP - Darlington 100V 10A 125W Through Hole TO-3PF,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 625mW Through Hole TO-92-3,
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 30V 5.5A 110MHz 2.1W Surface Mount SOT-89-3,
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