MJD112T4G
MJD112T4G
Part Number MJD112T4G
Description TRANS NPN DARL 100V 2A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
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MJD112T4G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD112,117
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 20W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Part Number MJD112
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