MJD112-1G
MJD112-1G
Part Number MJD112-1G
Description TRANS NPN DARL 100V 2A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
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MJD112-1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD112,117
Standard Package 75
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Base Part Number MJD112
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