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MJD112-1G

MJD112-1G

Part NumberMJD112-1G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 100V 2A IPAK

DatasheetMJD112,117

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

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MJD112-1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD112,117
Standard Package	75
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	1.75W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Base Part Number	MJD112

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MJD112-1G - Tags

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