MJ14002G
MJ14002G
Part Number MJ14002G
Description TRANS NPN 80V 60A TO3
Package / Case TO-204AE
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
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MJ14002G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ14001,2,3
Standard Package 100
Manufacturer ON Semiconductor
Series -
Packaging Tray
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 60A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 3V @ 12A, 60A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 50A, 3V
Power - Max 300W
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-3
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