MJ11032G


MJ11032G

Part NumberMJ11032G

Manufacturer

Description

Datasheet

Package / CaseTO-204AE

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJ11032G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package100
ManufacturerON Semiconductor
Series-
PackagingTray
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)50A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Power - Max300W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-3

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