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MJ11032G

MJ11032G

Part NumberMJ11032G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 120V 50A TO3

DatasheetMJ11028,29,30,32,33

Package / CaseTO-204AE

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3

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MJ11032G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJ11028,29,30,32,33
Standard Package	100
Manufacturer	ON Semiconductor
Series	-
Packaging	Tray
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	50A
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V
Power - Max	300W
Frequency - Transition	-
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AE
Supplier Device Package	TO-3

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