MJ11016G
MJ11016G
Part Number MJ11016G Description TRANS NPN DARL 120V 30A TO3 Package / Case TO-204AA, TO-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
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MJ11016G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ11012,15,16 Standard Package 100 Manufacturer ON Semiconductor Series - Packaging Tray Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 30A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V Power - Max 200W Frequency - Transition 4MHz Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-204 (TO-3)
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BC817-40Q-13-F Diodes Incorporated, Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 310mW Surface Mount SOT-23, Automotive, AEC-Q101
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MMBT5962 ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 100mA 350mW Surface Mount SOT-23-3 (TO-236),
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KSC2752OSTU ON Semiconductor, Bipolar (BJT) Transistor NPN 400V 500mA 1W Through Hole TO-126-3,
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BF722,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 250V 100mA 60MHz 1.2W Surface Mount SC-73,
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MMSTA06-7-F Diodes Incorporated, Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 200mW Surface Mount SOT-323,
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PDTD113ZTVL Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 500mA Surface Mount TO-236AB,
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