MII200-12A4

Part NumberMII200-12A4

ManufacturerIXYS

DescriptionMOD IGBT RBSOA 1200V 270A Y3-DCB

DatasheetM(II,ID,DI)200-12A4

Package / CaseY3-DCB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module NPT Half Bridge 1200V 270A 1130W Chassis Mount Y3-DCB

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MII200-12A4 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

M(II,ID,DI)200-12A4

Standard Package

Manufacturer

IXYS

Series

Part Status

Active

IGBT Type

NPT

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

270A

Power - Max

1130W

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 150A

Current - Collector Cutoff (Max)

10mA

Input Capacitance (Cies) @ Vce

11nF @ 25V

Input

Standard

NTC Thermistor

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Y3-DCB

Supplier Device Package