MDS1100


MDS1100

Part NumberMDS1100

Manufacturer

Description

Datasheet

Package / Case55TU-1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MDS1100 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.03GHz
Noise Figure (dB Typ @ f)-
Gain8.9dB
Power - Max8750W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Current - Collector (Ic) (Max)100A
Operating Temperature200°C (TJ)
Mounting TypeSurface Mount
Package / Case55TU-1
Supplier Device Package55TU-1

MDS1100 - Tags

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