MBT35200MT1G


MBT35200MT1G

Part NumberMBT35200MT1G

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MBT35200MT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)35V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Power - Max625mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Supplier Device Package6-TSOP
Base Part NumberMBT35200

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MBT35200MT1G - Tags

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