LND250K1-G
LND250K1-G
Part Number LND250K1-G Description MOSFET N-CH 500V 0.013A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
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LND250K1-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LND250 Standard Package 1 Manufacturer Microchip Technology Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 (TO-236AB) Package / Case TO-236-3, SC-59, SOT-23-3
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