LND250K1-G
LND250K1-G
Part Number LND250K1-G
Description MOSFET N-CH 500V 0.013A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
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LND250K1-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LND250
Standard Package 1
Manufacturer Microchip Technology
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3
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