LND150N3-G-P014

Part NumberLND150N3-G-P014

ManufacturerMicrochip Technology

DescriptionMOSFET N-CH 500V 30MA TO92-3

DatasheetLND150

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

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LND150N3-G-P014 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

LND150

Standard Package

2000

Manufacturer

Microchip Technology

Series

Packaging

Tape & Box (TB)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

1000Ohm @ 500µA, 0V

Vgs(th) (Max) @ Id

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

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