KSD2012GTU


KSD2012GTU

Part NumberKSD2012GTU

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

KSD2012GTU - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1000
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Power - Max25W
Frequency - Transition3MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F

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KSD2012GTU - Tags

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