KSD2012GTU
KSD2012GTU
Part Number KSD2012GTU
Description TRANS NPN 60V 3A TO-220F
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F
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KSD2012GTU - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet KSD2012
Standard Package 1000
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V
Power - Max 25W
Frequency - Transition 3MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
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