JAN2N5415S

Part NumberJAN2N5415S

ManufacturerMicrosemi Corporation

DescriptionTRANS PNP 200V 1A TO39

Datasheet2N5415S,2N5416S

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 200V 1A 750mW Through Hole TO-39 (TO-205AD)

To learn about the specification of JAN2N5415S, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add JAN2N5415S with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of JAN2N5415S.
We are offering JAN2N5415S for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

JAN2N5415S - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N5415S,2N5416S

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/485

Packaging

Bulk

Part Status

Active

Transistor Type

PNP

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

200V

Vce Saturation (Max) @ Ib, Ic

2V @ 5mA, 50mA

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 50mA, 10V

Power - Max

750mW

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Supplier Device Package

TO-39 (TO-205AD)

All categories