JAN2N4957UB


JAN2N4957UB

Part NumberJAN2N4957UB

Manufacturer

Description

Datasheet

Package / Case3-SMD, No Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

JAN2N4957UB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30V
Frequency - Transition-
Noise Figure (dB Typ @ f)3.5dB @ 450MHz
Gain25dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 10V
Current - Collector (Ic) (Max)30mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageUB

JAN2N4957UB - Tags

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