Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ JAN2N4150

JAN2N4150

JAN2N4150

Part NumberJAN2N4150

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 70V 10A TO-5

Datasheet2N4150(S),2N5237(S),2N5238(S)

Package / CaseTO-205AA, TO-5-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 70V 10A 1W Through Hole TO-5

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JAN2N4150 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N4150(S),2N5237(S),2N5238(S)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	Military, MIL-PRF-19500/394
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	10A
Voltage - Collector Emitter Breakdown (Max)	70V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 1A, 10A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 5A, 5V
Power - Max	1W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Supplier Device Package	TO-5

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