Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ JAN2N3501

JAN2N3501

JAN2N3501

Part NumberJAN2N3501

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 150V 0.3A

Datasheet2N3498 - 2N3501

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 150V 300mA 1W Through Hole TO-39 (TO-205AD)

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JAN2N3501 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N3498 - 2N3501
Standard Package	1
Manufacturer	Microsemi Corporation
Series	Military, MIL-PRF-19500/366
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	300mA
Voltage - Collector Emitter Breakdown (Max)	150V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	1W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39 (TO-205AD)

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