JAN2N3501


JAN2N3501

Part NumberJAN2N3501

Manufacturer

Description

Datasheet

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

JAN2N3501 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/366
PackagingBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)150V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max1W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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